1. Nadine Denis; Akant Sagar Sharma; Didem Dede; Timur Nurmamytov; Salvatore Cianci; Francesca Santangeli; Marco Felici; Victor Boureau; Antonio Polimeni; Silvia Rubini; Anna Fontcuberta i Morral; Marta De Luca. "Single Photon Emitters in Thin GaAsN Nanowire Tubes Grown on Si", ACS Nano, 19, 46, 39757–39767(2025).
https://doi.org/10.1021/acsnano.5c12139
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2. Sorodoc, Robert$; De Vincenzi, Paolo$; Sharma, Akant; Bucci, Giada; Roggi, Mario;
Mugnaioli, Enrico; Sorba, Lucia; De Luca, Marta; Zannier, Valentina, “Tunable GaAsxP1-x
quantum dot emission in wurtzite GaP Nanowires” , ACS Appl. Mater. Interfaces 16, 47, 65222–65232 (2024).
https://doi.org/10.1021/acsami.4c15343
​$ equal contribution
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3. Akant Sagar Sharma*, S. J. Sreerag, Rajeev N Kini, “Temperature-dependent ultrafast hot
carrier dynamics in the dilute bismide alloy”, GaSb1-xBix (x ≾ 0.4%), J. Appl. Phys. 135,
035701 (2024)
*corresponding author
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4. S. J. Sreerag $, Akant Sagar Sharma*$, T. B. O Rockett, J. P. R. David, R.D. Richards, R. N.
Kini, “Negative thermal quenching in optically pumped GaAsBi-GaAs heterojunction p-i-n
diode”, Applied Physics A 129, 603 (2023)
*corresponding author
$ equal contribution
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5. Akant Sagar Sharma*, N Malathi, Subhasis Das, R.N. Kini, “Temperature-dependent electron
Hall mobility in LPE-grown InPBi/InP epilayers”, Journal of Materials Science: Materials in
Electronics 34, 450 (2023)
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6. "Control of the composition and the structural properties of GaAsSb layers, grown by liquid
phase epitaxy, by Bi addition to the growth melt.” Akant Sagar Sharma, Subhasis Das, and S.
Dhar. Journal of Crystal Growth (2020): 125739.
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7. “Growth of dilute quaternary alloy InPNBi and its characterization” S Das, Akant Sagar
Sharma, S. A. Gazi, & S. Dhar. Journal of Crystal Growth, (2020) 535, 125532.
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8. “Photoluminescence investigation of the properties of GaAsSb in the dilute Sb regime”. S. Das,
Akant Sagar Sharma, S. Bakshi, & S. Dhar. Journal of Materials Science: Materials in
Electronics (2020), 1-8.
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9. "Influence of Pb vs Ga solvents during liquid phase epitaxy on the optical and electrical
properties of GaSbBi layers." Akant Sagar Sharma, Subhasis Das, Sanowar Alam Gazi, and S.
Dhar. Journal of Applied Physics 126, no. 15 (2019): 155702.
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10. "Bi-Related below band Gap optical absorption band produced in GaSbBi after rapid thermal
anneal at high temperatures." M. K Bhowal, Subhasis Das, Akant Sagar Sharma, and S. Dhar.
Journal of Electronic Materials 48, no. 8 (2019): 5131-5134.
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11. “Anomalous increase of sub-bandgap photoluminescence from InPBi layers grown by liquid
phase epitaxy” Mithun Kumar Bhowal1, Subhasis Das2, Akant Sagar Sharma3, Santosh
Chandra Das4 and Sunanda Dhar5 Accepted Manuscript online 15 April 2019 • © 2019 IOP
Publishing Ltd, Materials Research Express.
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12. “Hydrostatic Pressure Dependent Optoelectronic Properties of InGaAsN/GaAs Spherical
Quantum Dots for Laser Diode Applications” I.Mal, J.Jayarubi, S.Das, Akant Sagar Sharma,
A.Jhon Peter, D.P.Samajder. physica status solidi (b) 2019 180039.
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13. “Influence of Bi on the temperature-dependent fundamental band gap parameters of
GaSb1−xBix” Akant Sagar Sharma and S Dhar Published 30 January 2019 • © 2019 IOP
Publishing Ltd Materials Research Express, Volume 6, Number 4.
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14. “Dependence of Strain Distribution in InGaN/GaN Quantum Wire and Spherical Quantum Dot
on the In Content in the Material” Akant Sagar Sharma, S.Dhar. Journal of Electronic
Materials, February, Volume 47, Issue 2, pp 1239–1243, 2018.
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15. “Influence of Bi and N related impurity states on the band structure and band offset of GaSbBiN
alloys” D.P. Samajdar, U.Das, Akant Sagar Sharma, S.Das, S.Dhar. Current Applied Physics
16 (12), 1687-1694, 2016.
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16. “Dependence of heavy hole exciton binding energy and the strain distribution in GaAsBi/GaAs
finite spherical quantum dot on Bi content in the material” Subhasis Das, Akant Sagar Sharma,
T.D.Das, S.Dhar, Superlattices and Microstructures, 86(2015), 221-227.
Oral Contribution: Creation of single-photon emitters in III-V dilute nitride nanowires via post-growth H-ion irradiation
Conference: Nanowire Week 2025
Date, where: 25 – 29/08/2025, St John’s College, University of Cambridge, Cambridge, UK
Authors: A. Sagar Sharma, P. De Vincenzi, N. Denis, F. Santangeli, S. Cianci, M. Yukimune, A. Polimeni, F. Ishikawa, M. De Luca.
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Oral Contribution: Tuning single-photon emission via checking the H-induced flaw complex in dilute III-V Nitride nanowires
Conference: EMRS Fall meeting
Date, where: September 16th -21st , 2024, University of Warsaw, Poland
Authors: A. Sagar Sharma, P. De Vincenzi, N. Denis, F. Santangeli, R. Pallucchi, S.Cianci, A. Polimeni, M. Yukimune, F. Ishikawa, M. De Luca.
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Poster: “InPBiN epitaxial layers grown by liquid phase epitaxy”
Conference: XIX IWPSD 2017
Date, where: 11-15th December, IIT Delhi, India
Authors: Akant Sagar Sharma, Subhasis Das, S.Dhar
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Poster: “Evidence of Bismuth-related defect states in InPBi layers, grown by liquid phase epitaxy”
Conference: ICMS (2017)
Date, where: 16-18 February 2017. Department of Physics, Tripura University, Agartala, India
Authors: M.K.Bhowal, Akant Sagar Sharma, S.Das, S. Dhar.
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Poster: “Strain in InGaN/GaN Quantum Dot and Nanowires, a theoretical study”
Conference: ICMS (2017)
Date, where: 16-18 February 2017. Department of Physics, Tripura University, Agartala, India
Authors: Akant Sagar Sharma, S.Dhar.
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Oral Contribution: Calculation of strain distribution in InGaN/GaN quantum dots
Conference: 6th International Conference on Computers and Devices for Communication (CODEC- 2015)
Date, where: 16-18 Dec. 2015, Institute of Radio Physics and Electronics, University of Calcutta, Kolkata, India
Authors: Akant Sagar Sharma, S. Dhar.