Publication List Articles Published or under revision in Peer-Reviewed Journals < Back “Quantum Light Emission from GaAsₓP₁₋ₓ Quantum Dots in Wurtzite GaP Nanowires.” Paolo De Vincenzi, Robert Andrei Sorodoc, Akant Sagar Sharma, Mario Roggi, Isabella Santanchè, Leonardo Perrini, Enrico Mugnaioli, Riccardo Rurali, Fabio Beltram, Lucia Sorba, Valentina Zannier, and Marta De Luca. ACS Applied Materials & Interfaces (2026). https://doi.org/10.1021/acsami.6c06019 “A New Strategy for Creating Quantum Light Emitters Via Post-Growth Hydrogen-Ion Irradiation of III-V Nanowires.” Akant Sagar Sharma, Paolo De Vincenzi, Nadine Denis, Francesca Santangeli, Riccardo Pallucchi, Harikrishnan Gopalakrishnan, Elena Blundo, Antonio Polimeni, Marco Felici, Fumitaro Ishikawa, Marta De Luca, et al. Advanced Functional Materials. “Bandgap Engineering On Demand in GaAsN Nanowires by Post-Growth Hydrogen Implantation.” Nadine Denis, Akant Sagar Sharma, Elena Blundo, Francesca Santangeli, Paolo De Vincenzi, Riccardo Pallucchi, Mitsuki Yukimune, Alexander Vogel, Ilaria Zardo, Antonio Polimeni, Fumitaro Ishikawa, and Marta De Luca. Small (2025). https://doi.org/10.1002/smll.202506091 “Single Photon Emitters in Thin GaAsN Nanowire Tubes Grown on Si.” Nadine Denis, Akant Sagar Sharma, Didem Dede, Timur Nurmamytov, Salvatore Cianci, Francesca Santangeli, Marco Felici, Victor Boureau, Antonio Polimeni, Silvia Rubini, Anna Fontcuberta i Morral, and Marta De Luca. ACS Nano 19(46), 39757–39767 (2025). https://doi.org/10.1021/acsnano.5c12139 “Tunable GaAsₓP₁₋ₓ Quantum Dot Emission in Wurtzite GaP Nanowires.” Robert Andrei Sorodoc*, Paolo De Vincenzi*, Akant Sagar Sharma, Giada Bucci, Mario Roggi, Enrico Mugnaioli, Lucia Sorba, Marta De Luca, and Valentina Zannier. ACS Applied Materials & Interfaces 16(47), 65222–65232 (2024). https://doi.org/10.1021/acsami.4c15343 “Temperature-Dependent Ultrafast Hot Carrier Dynamics in the Dilute Bismide Alloy GaSb₁₋ₓBiₓ (x ≲ 0.4%).” Akant Sagar Sharma*, S. J. Sreerag, and Rajeev N. Kini. Journal of Applied Physics 135, 035701 (2024). “Negative Thermal Quenching in Optically Pumped GaAsBi-GaAs Heterojunction p-i-n Diode.” S. J. Sreerag*, Akant Sagar Sharma*, T. B. O. Rockett, J. P. R. David, R. D. Richards, and R. N. Kini. Applied Physics A 129, 603 (2023). “Temperature-Dependent Electron Hall Mobility in LPE-Grown InPBi/InP Epilayers.” Akant Sagar Sharma*, N. Malathi, Subhasis Das, and R. N. Kini. Journal of Materials Science: Materials in Electronics 34, 450 (2023). “Control of the Composition and the Structural Properties of GaAsSb Layers, Grown by Liquid Phase Epitaxy, by Bi Addition to the Growth Melt.” Akant Sagar Sharma, Subhasis Das, and S. Dhar. Journal of Crystal Growth (2020), 125739. “Growth of Dilute Quaternary Alloy InPNBi and Its Characterization.” S. Das, Akant Sagar Sharma, S. A. Gazi, and S. Dhar. Journal of Crystal Growth 535, 125532 (2020). “Photoluminescence Investigation of the Properties of GaAsSb in the Dilute Sb Regime.” S. Das, Akant Sagar Sharma, S. Bakshi, and S. Dhar. Journal of Materials Science: Materials in Electronics (2020), 1–8. “Influence of Pb vs Ga Solvents During Liquid Phase Epitaxy on the Optical and Electrical Properties of GaSbBi Layers.” Akant Sagar Sharma, Subhasis Das, Sanowar Alam Gazi, and S. Dhar. Journal of Applied Physics 126(15), 155702 (2019). “Bi-Related Below-Band-Gap Optical Absorption Band Produced in GaSbBi After Rapid Thermal Anneal at High Temperatures.” M. K. Bhowal, Subhasis Das, Akant Sagar Sharma, and S. Dhar. Journal of Electronic Materials 48(8), 5131–5134 (2019). “Anomalous Increase of Sub-Bandgap Photoluminescence from InPBi Layers Grown by Liquid Phase Epitaxy.” Mithun Kumar Bhowal, Subhasis Das, Akant Sagar Sharma, Santosh Chandra Das, and Sunanda Dhar. Materials Research Express (2019). Published online 15 April 2019. “Hydrostatic Pressure Dependent Optoelectronic Properties of InGaAsN/GaAs Spherical Quantum Dots for Laser Diode Applications.” I. Mal, J. Jayarubi, S. Das, Akant Sagar Sharma, A. Jhon Peter, and D. P. Samajder. physica status solidi (b) (2019), 180039. “Influence of Bi on the Temperature-Dependent Fundamental Band Gap Parameters of GaSb₁₋ₓBiₓ.” Akant Sagar Sharma and S. Dhar. Materials Research Express 6(4) (2019). “Dependence of Strain Distribution in InGaN/GaN Quantum Wire and Spherical Quantum Dot on the In Content in the Material.” Akant Sagar Sharma and S. Dhar. Journal of Electronic Materials 47(2), 1239–1243 (2018). “Influence of Bi and N Related Impurity States on the Band Structure and Band Offset of GaSbBiN Alloys.” D. P. Samajdar, U. Das, Akant Sagar Sharma, S. Das, and S. Dhar. Current Applied Physics 16(12), 1687–1694 (2016). “Dependence of Heavy Hole Exciton Binding Energy and the Strain Distribution in GaAsBi/GaAs Finite Spherical Quantum Dot on Bi Content in the Material.” Subhasis Das, Akant Sagar Sharma, T. D. Das, and S. Dhar. Superlattices and Microstructures 86, 221–227 (2015). Note: = corresponding author (where indicated in the original list). $ = equal contribution (where indicated in the original list). Oral Contribution: Creation of single-photon emitters in III-V dilute nitride nanowires via post-growth H-ion irradiation Conference: Nanowire Week 2025 Date, where: 25 – 29/08/2025, St John’s College, University of Cambridge, Cambridge, UK Authors: A. Sagar Sharma, P. De Vincenzi, N. Denis, F. Santangeli, S. Cianci, M. Yukimune, A. Polimeni, F. Ishikawa, M. De Luca. Oral Contribution: Tuning single-photon emission via checking the H-induced flaw complex in dilute III-V Nitride nanowires Conference: EMRS Fall meeting Date, where: September 16th -21st , 2024, University of Warsaw, Poland Authors: A. Sagar Sharma, P. De Vincenzi, N. Denis, F. Santangeli, R. Pallucchi, S.Cianci, A. Polimeni, M. Yukimune, F. Ishikawa, M. De Luca. Poster: “InPBiN epitaxial layers grown by liquid phase epitaxy” Conference: XIX IWPSD 2017 Date, where: 11-15th December, IIT Delhi, India Authors: Akant Sagar Sharma, Subhasis Das, S.Dhar Poster: “Evidence of Bismuth-related defect states in InPBi layers, grown by liquid phase epitaxy” Conference: ICMS (2017) Date, where: 16-18 February 2017. Department of Physics, Tripura University, Agartala, India Authors: M.K.Bhowal, Akant Sagar Sharma, S.Das, S. Dhar. Poster: “Strain in InGaN/GaN Quantum Dot and Nanowires, a theoretical study” Conference: ICMS (2017) Date, where: 16-18 February 2017. Department of Physics, Tripura University, Agartala, India Authors: Akant Sagar Sharma, S.Dhar. Oral Contribution: Calculation of strain distribution in InGaN/GaN quantum dots Conference: 6th International Conference on Computers and Devices for Communication (CODEC- 2015) Date, where: 16-18 Dec. 2015, Institute of Radio Physics and Electronics, University of Calcutta, Kolkata, India Authors: Akant Sagar Sharma, S. Dhar.

< Back Carola Castrucci Administrative Coordinator Curriculum Vitae Publications From September 2025 to September 2026 , my responsibilities have expanded to include the ERC Nanowhyr project. I earned my degree in Linguistics, Literature, and Translation Studies from Sapienza University of Rome in 2020. I started working at Sapienza’s Physics Department in July 2022 as administrative coordinator of the Erasmus Mundus Joint Master’s Programmes. Since September 2025, my responsibilities have expanded to include the ERC Nanowhyr project. Back to Top carola.castrucci@uniroma1.it carola.castrucci@uniroma1.it Office: n° 104, first floor, Marconi building, Physics Department

< Back M. De Luca Apply Now Job Type Workspace About the Role Requirements About the Company Apply Now

< Back Francesca Santangeli PhD Student Curriculum Vitae Publications since 2022 PhD student in the Nanospectroscopy group at the Physics department of the Sapienza University of Rome, Italy. Currently working on tuning the optoelectronic and vibrational properties of InN nanowires. 2019-2022 Master of Science (MSc) in Organic Chemistry at Sapienza University, Rome 2016-2019 Bachelor of Science (BSc) in Chemistry at Sapienza University, Rome Back to Top Sapienza University of Rome, Physics Department francesca.santangeli@uniroma1.it Office: n° 349, third floor, Marconi building, Physics Department

< Back J. Overbeck, G. Barin, C. Daniels, M. Perrin, O. Braun, Q. Sun, R. Darawish, M. De Luca, X. Wang, T. Dumslaff, A. Narita, Akimitsu; K. Müllen, P. Ruffieux, V. Meunier, R. Fasel, and M. Calame Apply Now Job Type Workspace About the Role Requirements About the Company Apply Now

< Back Simone Nucchi Master Student Curriculum Vitae Publications since 2024 Master Student of Science (MSc) in Condensed Matter Physics at Sapienza University, Rome. 2021-2024 Bachelor of Science (BSc) in Physics at Sapienza University, Rome Back to Top Sapienza University of Rome, Physics Department Office: n° 349, third floor, Marconi building, Physics Department

< Back M. De Luca, C. Fasolato, M. A. Verheijen, Y. Ren, M. Y. Swinkels, S. Kölling, E. P. A. M. Bakkers, R. Rurali, X. Cartoixà, and I. Zardo Apply Now Job Type Workspace About the Role Requirements About the Company Apply Now

< Back D. Tedeschi, M. De Luca, P. E. Faria Junior, A. Granados del Águila, Q. Gao, H. H. Tan, B. Scharf, P. C. M. Christianen, C. Jagadish, J. Fabian and A. Polimeni Apply Now Job Type Workspace About the Role Requirements About the Company Apply Now

Publication List Articles Published or under revision in Peer-Reviewed Journals < Back Poster: “Hydrogenation-Driven Bandgap Engineering in InN Nanowires for Quantum Technologies and Optoelectronic Devices” Conference: Nanowire Week 2025 Date, where: 25 – 29/08/2025, St John’s College, University of Cambridge, Cambridge, UK Authors: Muhammad Tahir, Francesca Santangeli, Pietro Todesco, Ernesto Placidi, Marco Sbroscia, Zetian Mi, Songrui Zhao, Antonio Polimeni, and Marta De Luca.

PRIN Project Nanowires (NWs) are quasi-1D crystals with nanoscale diameters and several microns in length. This project aims at growing and thoroughly investigating quantum dots (QDs) and superlattices (SLs) in two different III-V NW heterostructures: GaAsP/GaP NWs, for photonic and optoelectronic applications in the visible-near infrared range, and InAsP/InP NWs, for telecom-wavelengths applications. The well-known vapor-liquid-solid growth approach will be employed to realize bottom-up NWs incorporating QDs of controllable size, position and chemical composition. In particular, we will use the chemical beam epitaxy technique, which combines the advantages of ultra-high-vacuum epitaxial growth with the ease of use and flexibility given by metalorganic precursor gas sources. The controlled NW morphology and diameter will be exploited for the optimization of the waveguiding properties of NWs for the nested QDs. Scanning electron microscopy (SEM) for morphology characterization and energy dispersive x-ray spectroscopy (EDX) for compositional analysis are performed in-house with a field emission gun (FEG) electron microscope operating up to 30 kV. Electron Beam Lithography (EBL) for substrate patterning is performed instead with a dedicated FEG SEM equipped with an interferometric stage. The CNR unit in Pisa has a remarkable expertise in the growth and structural characterization of III-V semiconductor nanowires, axial and radial nanowire heterostructures, and selective area nanostructures. The Chemical Beam Epitaxy (CBE) system and the cleanroom facility of the National Enterprise for nanoScience and nanoTechnology (NEST) Laboratory of Scuola Normale Superiore, where the Nanoscience institute of CNR is headquartered are fully available for the project.The CBE is equipped with a Riber Compact-21 growth chamber with an integrated Reflection of High Energy Electron Diffraction (RHEED) system for in-situ monitoring and an optical pyrometer for the substrate temperature measurement. Available group-V materials are arsenic (TBAs), phosphorous (TBP), and antimony (TDMASb and TMSb); for group III there are indium (TMIn), gallium (TEGa), and aluminium (TMAl) precursors. Transmission electron microscopy (TEM) to investigate the nanowires structural quality (crystal phase, interface sharpness, strain distribution) is also performed by the CNR unit, in collaboration with the Center for Instrument Sharing (CISUP) of the University of Pisa. R. Sorodoc, P. De Vincenzi, ACS Appl. Mater. Interfaces 16, 47 (2024) The growth and the structural characterization of the NWs performed at the CNR unit is cross-correlated to advanced optical spectroscopy experiments (inelastic light scattering and photoluminescence) carried out at Sapienza University. The optical measurements are performed also with a photon-correlation setup to probe the properties of the grown QDs. The close synergy of the two units allows a continuous flow of samples and information. In this way, a full picture of the structural, electronic, and optical properties of the QDs and SLs in NWs is achieved and controllably tuned. Single QDs in NWs with high brightness and low multi-photon emission probability are being realized within this project, as well SLs with a tunable period, in order to determine the new type of band alignment arising in the SL and show the potential of these SLs for NW-based optoelectronic applications such as photodetectors. Furthermore, NWs with GaAsP (with varying concentrations of As and P) in the wurtzite phase were created to study the new optical and electronic properties of the material in this new crystalline phase. The results of this study are then used as a starting point to better understand the effects of quantum confinement in the previously mentioned samples. Team members: Dr. Valentina Zannier, CNR researcher Prof. Marta De Luca, Sapienza University professor Prof. Lucia Sorba, CNR research director Robert Andrei Sorodoc, CNR fellow Paolo De Vincenzi, PhD student of Sapienza University Giada Bucci, PhD student of Scuola Normale Superiore Publications: Quantum Light Emission from GaAsxP1–x Quantum Dots in Wurtzite GaP Nanowires. P. De Vincenzi, R. A. Sorodoc, A. S. Sharma, M. Roggi, I. Santanchè, L. Perrini, E. Mugnaioli, R. Rurali, F. Beltram, L. Sorba, V. Zannier and M. De Luca*. ACS Appl. Mater. Interfaces (2026) Tunable GaAsxP1-x quantum dot emission in wurtzite GaP Nanowires . R. Andrei Sorodoc+, P. De Vincenzi+, A. Sagar Sharma, G. Bucci, M. Roggi, E. Mugnaioli, L. Sorba, M. De Luca and V. Zannier (+ equal contribution). ACS Appl. Mater. Interfaces 16, 47 (2024) Zincblende InAsxP1–x/InP Quantum Dot Nanowires for Telecom Wavelength Emission. G. Bucci*, V. Zannier, F. Rossi, A. Musiał, J. Boniecki, G. Sęk, L. Sorba. ACS Appl. Mater. Interfaces 16, 20 (2024) InAs–InP Superlattice Nanowires with Tunable Phonon Frequencies, V. Zannier, J. Trautvetter, A. K. Sivan, F. Rossi, D. de Matteis, B. Abad, R. Rurali, L. Sorba, I. Zardo. Advanced Physics Research 3, 6 (2024) Revealing Inclined Twin Related Defects in III–V Nanowires Grown in Popular Alternative Crystallographic Directions, H. A. Fonseka, N. Denis, J. A. Gott, X. Yuan, R. Beanland, H. H. Tan , C. Jagadish, A. M. Sanchez, M. De Luca*. J. Phys. Chem. C, 128, 21593 (2024) Phonon Interference Effects in GaAs-GaP Superlattice Nanowires, C. Arya, J. Trautvetter, J. M. Sojo-Gordillo, Y. Kaur, V. Zannier, A. Nigro, F. Beltram, T. Albrigi, A. Ruiz-Caridad, L. Sorba, R. Rurali I. Zardo*. ACS Nano, 19, 50, 42013–42021 (2025)

Teaching You can find more information on the courses taught by Prof. Marta De Luca here . Physics for Biology Info here: e-learning Laboratory of Mechanics for Physicists Info here: e-learning

< Back M. De Luca, G. Pettinari, G. Ciatto, L. Amidani, F. Filippone, A. Polimeni, E. Fonda, F. Boscherini, A. Amore Bonapasta, D. Giubertoni, A. Knubel, V. Lebedev, and M. Capizzi Apply Now Job Type Workspace About the Role Requirements About the Company Apply Now