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The Team Micromanipulation with Glass Tips Cryostat's Nanopositioner System The Team 1/8 Welcome to Our Lab

< Back H. A. Fonseka, A. S. Ameruddin, P. Caroff, D. Tedeschi, M. De Luca, F. Mura, Y. Guo, M. Lysevych, F. Wang, H. H. Tan, A. Polimeni, and C. Jagadish Apply Now Job Type Workspace About the Role Requirements About the Company Apply Now

< Back Francesca Santangeli PhD Student Curriculum Vitae Publications since 2022 PhD student in the Nanospectroscopy group at the Physics department of the Sapienza University of Rome, Italy. Currently working on tuning the optoelectronic and vibrational properties of InN nanowires. 2019-2022 Master of Science (MSc) in Organic Chemistry at Sapienza University, Rome 2016-2019 Bachelor of Science (BSc) in Chemistry at Sapienza University, Rome Back to Top Sapienza University of Rome, Physics Department francesca.santangeli@uniroma1.it Office: n° 349, third floor, Marconi building, Physics Department

ERC Project The group hosts the ERC Starting grant of Marta De Luca. NANOWHYR: Dots-in-NANOWires by near-field illumination: novel single-photon sources for HYbRid quantum photonic circuits The project aims at creating movable quantum light emitters for photonic circuits. In silicon-based quantum photonic circuits, a significant challenge is the efficient integration of a III-V-based single photon source. We are utilizing semiconductor nanowires because they can be grown directly on silicon or transferred to it after growth. When a nanowire incorporates a single photon emitter, such as a quantum dot, it becomes a movable light source. We are exploring the fabrication of quantum light emitters via a combination of hydrogenation and near-field illumination. This method enables the creation of an arbitrary number of quantum light emitters, which can be controlled in energy and position, allowing for integration in cavities.

Our Goals Nanostructures, such as 2D materials or nanowires, have revolutionized the field of semiconductors, making it possible, among others, to transform indirect bandgap materials to direct bandgap materials, or making it possible for a crystal to grow in a crystal structure that does not exist in bulk. We work in close collaboration with several growth laboratories providing nanostructures, and we functionalize them by several methods, such as hydrogen or helium irradiation, laser heating, thermal annealing, nanoscale patterning etc. to achieve the desired properties. Working at the boundaries between fundamental physics and technological applications, our goal is to achieve new functionalities or explore new physical effects. Advances in Optics and Photonics 13 (2021): 242. However, in the Nano-spectroscopy group we are not happy to work just with nanostructures: we create nanostructures inside the nanostructures. In our vision the nanostructures are scaffolds embedding smaller quantum structures (quantum dots, point defects that emit single photons, quantum rings, quantum wells, etc.) with diverse dimensionalities (0D, 1D, and 2D). For example, in nanowire lasers, by embedding quantum confined structures as active gain media it is possible to enhance the gain and lower lasing threshold. Moreover, by embedding quantum dots in nanowires for quantum photonic applications based on single photon emitters, it can be possible to obtain a higher photon extraction than in standard self-assembled dots embedded in a 3D matrix, owing to the possibility to design the nanowire to act as a waveguide with a photon out-coupler. This makes quantum dots in nanowires the ideal building block of quantum photonic circuits. Furthermore, by embedding quantum rings in quantum wells, one can unveil the topological phase of charge carriers, by controlling the appearance of magnetic states expected due to the circular symmetry of the carrier wavefunction (Aharonov-Bohm effect). Explore our Projects Physics Today 1 September 2009; 62 (9): 38–43

Publication List Articles Published or under revision in Peer-Reviewed Journals < Back Poster: “Hydrogenation-Driven Bandgap Engineering in InN Nanowires for Quantum Technologies and Optoelectronic Devices” Conference: Nanowire Week 2025 Date, where: 25 – 29/08/2025, St John’s College, University of Cambridge, Cambridge, UK Authors: Muhammad Tahir, Francesca Santangeli, Pietro Todesco, Ernesto Placidi, Marco Sbroscia, Zetian Mi, Songrui Zhao, Antonio Polimeni, and Marta De Luca.

Open Positions WHAT WE REQUIRE: Passion for designing and developing new experiments from scratch Thirst for knowledge Excellent communication skills and marked team spirit WHAT WE OFFER: A passionate, young and multidisciplinary group Special attention to diversity, both in gender and in nationality Candidates from all over the world and with all genders are welcomed Post-doc We have one open post-doc position on the ERC grant. Here are the details . PhD Student We have 1 open PhD position. The PhD in Italy lasts 3 years . PhD students do not have teaching duties but only research duties. However, in the first 1.5 years they have to attend courses and give exams. Admission to the PhD schools is very competitive and takes place only once a year, typically in June, for starting the PhD in November. Admission is decided by a committee, not by the Nanospectrosocpy group. However, before applying, you will have to send an email to marta.deluca@uniroma1.it with your CV and short motivation, and you may be asked to do an oral interview with the Nanospectrosocpy group before you submit your application to the PhD schools. There are two main PhD schools. Here you can find information on how to apply and which courses you can attend: PhD school in Physics (https://phd.uniroma1.it/web/PHYSICS_nD3503_EN.aspx ) PhD school in Materials Science (https://phd.uniroma1.it/web/MATHEMATICAL-MODELS-FOR-ENGINEERING,-ELECTROMAGNETICS-AND-NANOSCIENCES_nD3523_EN.aspx ) Master Student We have 2 open positions per year, and about 4-5 different projects. Contact marta.deluca@uniroma1.it to know more about the projects and do a lab tour. We welcome students from different Departments, ranging from Physics to Nanoscience and Chemistry.

Teaching You can find more information on the courses taught by Prof. Marta De Luca here . Physics for Biology Info here: e-learning Laboratory of Mechanics for Physicists Info here: e-learning

Publication List Articles Published or under revision in Peer-Reviewed Journals < Back 1. Paolo De Vincenzi, Robert Andrei Sorodoc, Akant Sagar Sharma, Mario Roggi, Isabella Santanchè, Leonardo Perrini, Enrico Mugnaioli, Riccardo Rurali, Fabio Beltram, Lucia Sorba, Valentina Zannier, Marta De Luca, "Quantum Light Emission from GaAsxP1–x Quantum Dots in Wurtzite GaP Nanowires", ACS Applied Materials & Interfaces (2026) https://doi.org/10.1021/acsami.6c06019 2. Nadine Denis, Akant Sagar Sharma, Elena Blundo, Francesca Santangeli, Paolo De Vincenzi, Riccardo Pallucchi, Mitsuki Yukimune, Alexander Vogel, Ilaria Zardo, Antonio Polimeni, Fumitaro Ishikawa, Marta De Luca, "Bandgap Engineering On Demand in GaAsN Nanowires by Post-Growth Hydrogen Implantation", Small (2025) https://doi.org/10.1002/smll.202506091 3. Nadine Denis; Akant Sagar Sharma; Didem Dede; Timur Nurmamytov; Salvatore Cianci; Francesca Santangeli; Marco Felici; Victor Boureau; Antonio Polimeni; Silvia Rubini; Anna Fontcuberta i Morral; Marta De Luca. "Single Photon Emitters in Thin GaAsN Nanowire Tubes Grown on Si", ACS Nano, 19, 46, 39757–39767(2025). https://doi.org/10.1021/acsnano.5c12139 4. Sorodoc, Robert$; De Vincenzi, Paolo$; Sharma, Akant; Bucci, Giada; Roggi, Mario; Mugnaioli, Enrico; Sorba, Lucia; De Luca, Marta; Zannier, Valentina, “Tunable GaAsxP1-x quantum dot emission in wurtzite GaP Nanowires ” , ACS Appl. Mater. Interfaces 16, 47, 65222–65232 (2024). https://doi.org/10.1021/acsami.4c15343 $ equal contribution 5. Akant Sagar Sharma*, S. J. Sreerag, Rajeev N Kini, “Temperature-dependent ultrafast hot carrier dynamics in the dilute bismide alloy ”, GaSb1-xBix (x ≾ 0.4%), J. Appl. Phys. 135, 035701 (2024) *corresponding author 6. S. J. Sreerag $, Akant Sagar Sharma*$, T. B. O Rockett, J. P. R. David, R.D. Richards, R. N. Kini, “Negative thermal quenching in optically pumped GaAsBi-GaAs heterojunction p-i-n diode ”, Applied Physics A 129, 603 (2023) *corresponding author $ equal contribution 7. Akant Sagar Sharma*, N Malathi, Subhasis Das, R.N. Kini, “Temperature-dependent electron Hall mobility in LPE-grown InPBi/InP epilayers ”, Journal of Materials Science: Materials in Electronics 34, 450 (2023) 8. "Control of the composition and the structural properties of GaAsSb layers, grown by liquid phase epitaxy, by Bi addition to the growth melt. ” Akant Sagar Sharma, Subhasis Das, and S. Dhar. Journal of Crystal Growth (2020): 125739. 9. “Growth of dilute quaternary alloy InPNBi and its characterization ” S Das, Akant Sagar Sharma, S. A. Gazi, & S. Dhar. Journal of Crystal Growth, (2020) 535, 125532. 10. “Photoluminescence investigation of the properties of GaAsSb in the dilute Sb regime ”. S. Das, Akant Sagar Sharma, S. Bakshi, & S. Dhar. Journal of Materials Science: Materials in Electronics (2020), 1-8. 11. "Influence of Pb vs Ga solvents during liquid phase epitaxy on the optical and electrical properties of GaSbBi layers. " Akant Sagar Sharma, Subhasis Das, Sanowar Alam Gazi, and S. Dhar. Journal of Applied Physics 126, no. 15 (2019): 155702. 12. "Bi-Related below band Gap optical absorption band produced in GaSbBi after rapid thermal anneal at high temperatures. " M. K Bhowal, Subhasis Das, Akant Sagar Sharma, and S. Dhar. Journal of Electronic Materials 48, no. 8 (2019): 5131-5134. 13. “Anomalous increase of sub-bandgap photoluminescence from InPBi layers grown by liquid phase epitaxy ” Mithun Kumar Bhowal1, Subhasis Das2, Akant Sagar Sharma3, Santosh Chandra Das4 and Sunanda Dhar5 Accepted Manuscript online 15 April 2019 • © 2019 IOP Publishing Ltd, Materials Research Express. 14. “Hydrostatic Pressure Dependent Optoelectronic Properties of InGaAsN/GaAs Spherical Quantum Dots for Laser Diode Applications ” I.Mal, J.Jayarubi, S.Das, Akant Sagar Sharma, A.Jhon Peter, D.P.Samajder. physica status solidi (b) 2019 180039. 15. “Influence of Bi on the temperature-dependent fundamental band gap parameters of GaSb1−xBix ” Akant Sagar Sharma and S Dhar Published 30 January 2019 • © 2019 IOP Publishing Ltd Materials Research Express, Volume 6, Number 4. 16. “Dependence of Strain Distribution in InGaN/GaN Quantum Wire and Spherical Quantum Dot on the In Content in the Material ” Akant Sagar Sharma, S.Dhar. Journal of Electronic Materials, February, Volume 47, Issue 2, pp 1239–1243, 2018. 17. “Influence of Bi and N related impurity states on the band structure and band offset of GaSbBiN alloys ” D.P. Samajdar, U.Das, Akant Sagar Sharma, S.Das, S.Dhar. Current Applied Physics 16 (12), 1687-1694, 2016. 18. “Dependence of heavy hole exciton binding energy and the strain distribution in GaAsBi/GaAs finite spherical quantum dot on Bi content in the material ” Subhasis Das, Akant Sagar Sharma, T.D.Das, S.Dhar, Superlattices and Microstructures, 86(2015), 221-227. Oral Contribution: Creation of single-photon emitters in III-V dilute nitride nanowires via post-growth H-ion irradiation Conference: Nanowire Week 2025 Date, where: 25 – 29/08/2025, St John’s College, University of Cambridge, Cambridge, UK Authors: A. Sagar Sharma, P. De Vincenzi, N. Denis, F. Santangeli, S. Cianci, M. Yukimune, A. Polimeni, F. Ishikawa, M. De Luca. Oral Contribution: Tuning single-photon emission via checking the H-induced flaw complex in dilute III-V Nitride nanowires Conference: EMRS Fall meeting Date, where: September 16th -21st , 2024, University of Warsaw, Poland Authors: A. Sagar Sharma, P. De Vincenzi, N. Denis, F. Santangeli, R. Pallucchi, S.Cianci, A. Polimeni, M. Yukimune, F. Ishikawa, M. De Luca. Poster: “InPBiN epitaxial layers grown by liquid phase epitaxy” Conference: XIX IWPSD 2017 Date, where: 11-15th December, IIT Delhi, India Authors: Akant Sagar Sharma, Subhasis Das, S.Dhar Poster: “Evidence of Bismuth-related defect states in InPBi layers, grown by liquid phase epitaxy” Conference: ICMS (2017) Date, where: 16-18 February 2017. Department of Physics, Tripura University, Agartala, India Authors: M.K.Bhowal, Akant Sagar Sharma, S.Das, S. Dhar. Poster: “Strain in InGaN/GaN Quantum Dot and Nanowires, a theoretical study” Conference: ICMS (2017) Date, where: 16-18 February 2017. Department of Physics, Tripura University, Agartala, India Authors: Akant Sagar Sharma, S.Dhar. Oral Contribution: Calculation of strain distribution in InGaN/GaN quantum dots Conference: 6th International Conference on Computers and Devices for Communication (CODEC- 2015) Date, where: 16-18 Dec. 2015, Institute of Radio Physics and Electronics, University of Calcutta, Kolkata, India Authors: Akant Sagar Sharma, S. Dhar.

Publication List Articles Published or under revision in Peer-Reviewed Journals < Back 1. Surfactant Free Platinum Nanoclusters as Fluorescent Probe for the Selective Detection of Fe(III) Ions Anu George, Harikrishnan G., Sukhendu Mandal* (Sens.Actuators B 243 (2017)332- 337). 2. Negative photoresponse of ZnO-PEDOT:PSS nanocomposites and photogating effects Harikrishnan G.*, Sesha Vempati, K Bandopadhyay, K. Prajapati, Vijith Kalathingal and J. Mitra* (Nanoscale Advances,1 (2019)2435). 3. Epsilon-near-zero response in Indium Tin Oxide thin fims: Octave span tuning and IR plasmonics Ben Johns, Navas M P, Harikrishnan G., Akhileshwar Mishra, Ravi Pant, J. Mitra* (Journal of Applied Physics 127(4):043102(2020)). 4. Enhancement in electrical conductivity of a porous indium based metal-organic framework upon 12 uptake: combined experimental and theoretical investigations Mani Prabhu, Mandal Nilangshu, Roopesh Mekkat, Harikrishnan G., Datta Ayan, Mandal Sukhendu* (Journal of Materials Chemistry C 8(14):4836-4842(2020)). 5. Controlling the macroscopic electrical properties of reduced graphene oxide by nanoscale writing of electronic channels Arijit Kayal, Harikrishnan G.,K. Bandopaghyay, Amit Kumar, S. Ravi P. Silva, J.Mitra* (Nanotechnology, 2021.32(17):p.175202). 6. Mobility enhancement in CVD-grown monolayer MoS2 via patterned substrate induced non-uniform straining Arijit Kayal, Sraboni Dey, Harikrishnan G., Nadarajan Renjith, Chattopadhyay Shashwata, J.Mitra* (Nano Lett. 2023, 23, 14, 6629-6636). 7. Anomalous Photoresponse in a Reduced Metal- Semiconductor Hybrid of Nickel and Titanium Oxide Harikrishnan G., K. Bandopadhyay, K. Kolodziejak, Vinayak B Kamble, Dorota A. Pawlak, J.Mitra * (arXiv:2309.17427 [physics.app-ph]). 8. Negative resistance and anomalous transport properties of a porous anisotropic (Ni- TiO2) hybrid system Harikrishnan G., Shashwata Chattopadhyay, K. Bandopadhyay, K. Kolodziejak, Dorota A. Pawlak, J.Mitra * (arXiv:2310.02976 [cond-mat.mtrl-sci]). Poster : “Comprehensive Raman toolkit to probe crystal quality, geometry, and vibrational properties of InN nanowires” Conference: Nanowire Week 2025 Date, where: 25 – 29/08/2025, St John’s College, University of Cambridge, Cambridge, UK Authors: Harikrishnan Gopalakrishnan, Francesca Santangeli, Pietro Todesco, Muhammad Tahir, Ernesto Placidi, Francesco Mura, Zetian Mi, Songrui Zhao, and Marta De Luca.

< Back A. Zilli, M. De Luca, D. Tedeschi, A. Fonseka, A. Miriametro, H. Tan, C. Jagadish, M. Capizzi, and A. Polimeni Apply Now Job Type Workspace About the Role Requirements About the Company Apply Now

< Back M. De Luca, A. Polimeni, M. Felici, A. Miriametro, M. Capizzi, F. Mura, S. Rubini, F. Martelli Apply Now Job Type Workspace About the Role Requirements About the Company Apply Now